Faculty Details

• Doctor of Philosophy, III-V Compound Semiconductors, Solid-State Physical Electronics, Optoelectronics, Nanotechnology, University of Calcutta, 2012
• M. Sc., Physics, SMIT, 2006
• B. Sc., Physics, University of Burdwan, 2004

• Sikkim Manipal Institute of Technology, Assistant Professor, Teaching and Research, 2017 to Present
• IIEST Shibpur, Postdoctoral Fellow, Research, 2016 to 2017
• Georgia State University, Postdoctoral Fellow, Research, 2014 to 2016
• Indian Institute of Technology Kharagpur, Postdoctoral Fellow, Research, 2012 to 2016

AREAS OF INTEREST, EXPERTISE AND RESEARCH

• Area of Interest Optoelectronic, Nanotechnology, Infrared Photodetector, Silicon Solar Cells


• Area of Expertise Growth/Epitaxy and Characterization of III-V Optoelectronic and Photovoltaic Devices, Physics and Technology of Nanoscale Electronic Devices


• Area of Research Growth/Epitaxy and Characterization of III-V Optoelectronic and Photovoltaic Devices, Infrared Photodetector, Silicon Solar Cells, Physics and Technology of Nanoscale Electronic Devices

• Dr. Sanjib Kabi is an Assistant Professor- I in the Department of Physics, SMIT. His responsibilty areas includes Teaching in PG and B.Tech courses with other academic and non-academic tasks.

• Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot

  2015 | Dr. Sanjib Kabi | Sanjib Kabi | A. G. Unil Perera

  Proposed a formulation to calculate absorption coefficients of III-V semiconductor quantum dot. | J. Appl. Phys, 117, 124303 (2015)

• 2DEG Modulation in Double Quantum Well Enhancement Mode Nitride HEMT

  2015 | Dr. Sanjib Kabi | Ankush Bag | Palash Das | Rahul Kumar | Partha Mukhopadhyay | Shubhankar Majumder | Sanjib Kabi | Dhrubes Biswas

  2DEG modulation in Double Quantum Well Enhancement Mode Nitride HEMT.

• Novel Approach to Analytical Modeling of Composite Barrier AlGaN/GaN HEMT Structure; Impact of Energy States on Device Parameters

  2015 | Dr. Sanjib Kabi | Palash Das | Sanjib Kabi | Dhrubes Biswas

  Novel approach to analytical modeling of composite barrier AlGaN/GaN HEMT structure; impact of energy states on device parameters. | Electron Material Letters

• Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

  2014 | Dr. Sanjib Kabi | Saptarsi Ghosh | Syed Mukulika Dinara | Partha Mukhopadhyay | Sanjay K. Jana | Ankush Bag | Apurba Chakraborty | Edward Yi Chang | Sanjib Kabi | Dhrubes Biswas

  Effects of threading dislocations on drain current. | Appl. Phys. Lett. 105, 073502 (2014)